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| FDP6670AS/FDB6670AS January 2005 FDP6670AS/FDB6670AS 30V N-Channel PowerTrench(R) SyncFETTM General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low and low gate charge. The FDP6670AS RDS(ON) includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDP6670AS/FDB6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6670A/FDB6670A in parallel with a Schottky diode. Features * 31 A, 30 V. RDS(ON) = 8.5 m @ VGS = 10 V RDS(ON) = 10.5 m @ VGS = 4.5 V * Includes SyncFET Schottky body diode * Low gate charge (28nC typical) * High performance trench technology for extremely low RDS(ON) and fast switching * High power and current handling capability D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 20 62 (Note 1) Units V V A W W/C C C 150 62.5 0.5 -55 to +150 275 Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.1 62.5 C/W C/W Package Marking and Ordering Information Device Marking FDB6670AS FDB6670AS FDP6670AS FDP6670AS Device FDB6670AS FDB6670AS_NL (Note 3) FDP6670AS FDP6670AS_NL (Note 4) Reel Size 13'' 13'' Tube Tube Tape width 24mm 24mm n/a n/a Quantity 800 units 800 units 45 45 FDP6670AS/FDB6670AS Rev A(X) (c)2005 Fairchild Semiconductor Corporation FDP6670AS/FDB6670AS Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 1mA Min 30 Typ Max Units V Off Characteristics ID = 26mA, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V 30 500 100 mV/C A nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 1mA 1 ID = 26mA, Referenced to 25C VGS = 10 V, ID = 31 A VGS = 4.5 V, ID = 26.5 A VGS=10 V, ID =31 A, TJ=125C VGS = 10 V, VDS = 10 V, VDS = 10 V ID = 31 A 60 1.7 -3.4 6.8 8.4 9 84 3 V mV/C 8.5 10.5 12.5 m ID(on) gFS A S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) 1570 VDS = 15 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz 440 160 1.9 pF pF pF Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qgs Qgd Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time 9 VDS = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 12 27 19 16 VDS = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 16 25 13 28 VDS = 15 V, ID = 31 A, 15 5 5 18 22 43 34 29 29 40 23 39 21 ns ns ns ns ns ns ns ns nC nC nC nC Total Gate Charge, Vgs=10V Gate-Source Charge, Vgs=5V Gate-Drain Charge Gate-Drain Charge Drain-Source Diode Characteristics VSD trr Qrr Notes: 1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 2. See "SyncFET Schottky body diode characteristics" below. 3. FDB6670AS_NL is a lead free product. The FDB6670AS_NL marking will appear on the reel label. 4. FDP6670AS_NL is a lead free product. The FDP6670AS_NL marking will appear on the reel label. Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 3.5 A, diF/dt = 300 A/s (Note 1) (Note 1) 0.5 0.6 20 14 0.7 0.9 V nS nC (Note 2) FDP6670AS/FDB6670AS Rev A (X) FDP6670AS/FDB6670AS Typical Characteristics 150 VGS = 10V 6.0V 5.0V 4.0V 1.8 4.5V VGS = 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 ID, DRAIN CURRENT (A) 120 90 3.5V 1.4 4.0V 4.5V 5.0V 60 1.2 6.0V 10V 30 3.0V 1 0 0 1 2 3 VDS, DRAIN-SOURCE VOLTAGE (V) 4 0.8 0 30 60 90 ID, DRAIN CURRENT (A) 120 150 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.022 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 31A VGS = 10V 1.4 ID = 15.5A 0.017 1.2 TA = 125oC 0.012 1 0.007 0.8 TA = 25 C o 0.6 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 0.002 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 80 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 60 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. VGS = 0V 1 TA = 125 C 25oC -55oC o 40 TA = 125 C 20 -55oC 25oC 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 o 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.6 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP6670AS/FDB6670AS Rev A (X) FDP6670AS/FDB6670AS Typical Characteristics (continued) 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 31A 2400 f = 1MHz VGS = 0 V CAPACITANCE (pF) VDS = 10V 20V 1800 Ciss 1200 8 6 15V 4 Coss 600 2 Crss 0 0 6 12 18 Qg, GATE CHARGE (nC) 24 30 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 1000 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) RDS(ON) LIMIT 1s 10s 100 100s 10ms 100m 800 SINGLE PULSE RJC = 2.1C/W TA = 25C 600 10 DC VGS = 10V SINGLE PULSE o RJC = 2.1 C/W TA = 25 C o 400 200 1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.1 1 10 t1, TIME (sec) 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJC(t) = r(t) * RJC RJC = 2.1 C/W P(pk t1 t2 SINGLE PULSE 0.01 TJ - Tc = P * RJC(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDP6670AS/FDB6670AS Rev A (X) FDP6670AS/FDB6670AS Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDP6670AS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 IDSS, REVERSE LEAKAGE CURRENT (A) 0.01 TA = 125oC CURRENT: 0.8A/div 0.001 TA = 100oC 0.0001 TA = 25oC 0.00001 0 10 20 VDS, REVERSE VOLTAGE (V) 30 TIME: 12.5ns/div Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature. Figure 12. FDP6670AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDP6670A). CURRENT: 0.8A/div TIME: 12.5ns/div Figure 13. Non-SyncFET (FDP6670A) body diode reverse recovery characteristic. FDP6670AS/FDB6670AS Rev A (X) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM Across the board. Around the world.TM OPTOLOGIC OPTOPLANARTM The Power Franchise PACMANTM Programmable Active DroopTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 |
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